By Marc J. Madou
This booklet is a lucid presentation for chemists, electric engineers, floor scientists, and solid-state physicists, of the basics underlying the development of straightforward and small chemical sensors. the 1st a part of the publication is a evaluate of the theoretical historical past in stable kingdom physics, chemistry and electronics. Semiconductor and stable electrolyte bulk versions are reviewed in addition to solid/gas and solid/liquid interface types. Membranes and catalysis conception also are lined expansively. the second one half is a dialogue of extra entire sensor units, their crucial parts, an. Read more...
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Extra info for Chemical Sensing with Solid State Devices
52), where tx is assumed equal to 1. As mentioned before, serious electrode polarization might follow when tx < 1. 9. In Solid-State Background 54 2 other words, the measurements are confined to cases where the electrode reactions are highly reversible so that the electronic current does not readily cause polarization. When a membrane is used in a solution for ion sensing, the electronic conductivity contribution is less detrimental to the operation of the sensor. Actually some good ion-selective membranes such as the ones based on Ag 2S have quite a large electronic conductivity.
But in sensor applications, as we will explain in the following section, the electronic contribution to the total conductivity is undesirable. The latter is especially true for the use of solid electrolytes as gas sensors, but it also has important consequences for the use of solid electrolytes in ion sensing. 2 Use of a Solid Electrolyte as a Membrane Introduction In sensor applications solid electrolytes are used as nonporous mem branes separating two compartments containing chemical species at differ ent concentrations on either side.
22b) as C~ versus F a p, ptwo important parameters are immediately available. First, the doping level, here repre sented as ΝΌ, an obviously important parameter for semiconductors, is obtained from the slope. potential, is obtained by 2 Second, the flat-band 2 extrapolating the C~ /V plot to C~ = 0. The flat-band potential varies with double layers at the surface. For example, if there is a trapped charge in the oxide, the double layer between the trapped charge in the oxide and the neutralizing charge in the semiconductor would be reflected in a shift in Vfo.
Chemical Sensing with Solid State Devices by Marc J. Madou