By Benjamin Lingnau
This thesis sheds gentle at the targeted dynamics of optoelectronic units in response to semiconductor quantum-dots. The complicated scattering strategies fascinated about filling the optically energetic quantum-dot states and the presence of charge-carrier nonequilibrium stipulations are pointed out as assets for the certain dynamical habit of quantum-dot established units. accomplished theoretical types, which permit for a correct description of such units, are awarded and utilized to fresh experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is at once attributed to their precise charge-carrier dynamics and amplitude-phase-coupling, that is chanced on to not be effectively defined by means of traditional techniques. the possibility of quantum-dot semiconductor optical amplifiers for novel purposes comparable to simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the original digital constitution of semiconductor quantum-dots are discovered to make such units best applicants for the implementation of next-generation optoelectronic functions, that can considerably simplify optical telecommunication networks and open up novel high-speed info transmission schemes.
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Extra info for Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices
While the quasi-Fermi level can be inferred from the 44 2 Theory of Quantum-Dot Optical Devices charge-carrier densities in the carrier reservoir, the quasi-equilibrium temperature in most models is assumed to be constant, and thus Auger heating as well as other heating effects are neglected. Here, an energy balance approach is presented that can be used to dynamically calculate the change of the quasi-equilibrium charge-carrier temperature. Carrier heating has been previously shown to crucially influence the performance of electro-optic devices.
In a charge carrier capture event, a quantum-well charge carrier at energy ε1 QW (relative to the quantum-well band edge E b,0 ) fills a vacant quantum-dot state with energy εQD , under scattering of a quantum-well carrier from ε2 to the vacant state ε3 , where energy conservation dictates ε3 = ε2 + (ε1 − εQD ). The total quantum-well energy change is thus U QW = ε3 −ε2 −ε1 = εQD , and thus equal to the localization energy of the involved quantum-dot state. Similarly, for intra-dot scattering from the excited to the ground state, a net energy equal to the GS-ES separation b is added to the total quantum-well charge carrier energy.
81), the spontaneous emission strength is calculated to Dsp = 2β 2N QD εbg ε0 h QW j j νm f ( j)Wm ρe,m ρh,m ωmj . 4 Quantum-Dot Laser Rate Equations 41 which leads to the deterministic approximation of spontaneous emission: ∂ E(t) ∂t sp = Dsp . 84) While numerically easier to implement than the stochastic approach, this approximation, however, diverges for E = 0. A description in the photon picture could circumvent this problem. 4 Carrier-Induced Gain and Refractive Index Changes j From Eq. 72) it becomes clear that the real part of the gain coefficients gm contribute to the amplitude gain or loss of the electric field.
Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices by Benjamin Lingnau